Datasheet
TLC2202, TLC2202A, TLC2202B, TLC2202Y
Advanced LinCMOS LOW-NOISE PRECISION
DUAL OPERATIONAL AMPLIFIERS
SLOS056A – MAY 1990 – REVISED AUGUST 1994
Copyright 1994, Texas Instruments Incorporated
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
• TLC2202B Is 100% Tested for Noise
30 nV/√Hz
Max at f = 10 Hz
12 nV/√Hz
Max at f = 1 kHz
• Low Input Offset Voltage . . . 500 µV Max
• Excellent Offset Voltage Stability
With Temperature . . . 0.5 µV/°C Typ
• Rail-to-Rail Output Swing
• Low Input Bias Current
1 pA Typ at T
A
= 25°C
• Common-Mode Input Voltage Range
Includes the Negative Rail
description
The TLC2202, TLC2202A, TLC2202B, and
TLC2202Y are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOS process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent dc and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to
ESD may result in degradation of the parametric performance.
AVAILABLE OPTIONS
T
V
V max
V max
PACKAGED DEVICES
CHIP
T
A
V
IO
max
AT 25°C
V
n
max
f = 10 Hz
AT 25°C
V
n
max
f = 1 kHz
AT 25°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
CHIP
FORM
(Y)
0°C70°C
500 µV
30 nV/√Hz 12 nV/√Hz
TLC2202BCD — — TLC2202BCP
TLC2202Y
0°C to 70°C
500
µV
500 µV
30
nV/√Hz
35 nV/√Hz
12
nV/√Hz
15 nV/√Hz
TLC2202BCD
TLC2202ACD — —
TLC2202BCP
TLC2202ACP
TLC2202Y
µ
1 mV
— —
TLC2202CD — — TLC2202CP
40°C85°C
500
µ
V
30 nV/√Hz 12 nV/√Hz
TLC2202BID — — TLC2202BIP
–40°C to 85°C
500
µV
500 µV
30
nV/√Hz
35 nV/√Hz
12
nV/√Hz
15 nV/√Hz
TLC2202BID
TLC2202AID — —
TLC2202BIP
TLC2202AIP
—
µ
1 mV
— —
TLC2202ID — — TLC2202IP
55°C 125°C
500 µV
30 nV/√Hz 12 nV/√Hz
TLC2202BMD TLC2202BMFK TLC2202BMJG TLC2202BMP
–55°C to 125°C
500
µV
500 µV
30
nV/√Hz
35 nV/√Hz
12
nV/√Hz
15 nV/√Hz
TLC2202BMD
TLC2202AMD
TLC2202BMFK
TLC2202AMFK
TLC2202BMJG
TLC2202AMJG
TLC2202BMP
TLC2202AMP
—
µ
1 mV
— —
TLC2202MD TLC2202MFK TLC2202MJG TLC2202MP
The D packages are available taped and reeled. Add R suffix to device type (e.g. TLC2202BCDR). Chips are tested at 25°C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
1 10 100
Vn – Equivalent Input Noise Voltage – nV/ Hz
f – Frequency – Hz
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
1 k 10 k
50
40
30
20
10
0
V
DD
= 5 V
R
S
= 20 Ω
T
A
= 25°C
Hz
V
n
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
On products compliant to MIL-STD-883, Class B, all parameters are
tested unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.