Data Sheet

ManualsBrandsUnbranded ManualsHigh Current DriversULN2003APG High Current Driver

ULN2003,04APG/AFWG

2010-12-03

TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic

ULN2003APG,ULN2003AFWG

ULN2004APG,ULN2004AFWG

7-ch Darlington Sink Driver

The ULN2003APG/AFWG Series are high−voltage, high−current

darlington drivers comprised of seven NPN darlington pairs.

All units feature integral clamp diodes for switching inductive

loads.

Applications include relay, hammer, lamp and display (LED)

drivers.

Features

z Output current (single output): 500 mA max

z High sustaining voltage output: 50 V min

z Output clamp diodes

z Inputs compatible with various types of logic

z Package Type-APG: DIP-16pin

z Package Type-AFWG: SOL-16pin

Type

Input Base

Resistor

Designation

ULN2003APG/AFWG 2.7 kΩ TTL, 5 V CMOS

ULN2004APG/AFWG 10.5 kΩ 6 to 15 V PMOS, CMOS

Pin Connection

(top view)

ULN2003APG

ULN2004APG

ULN2003AFWG

ULN2004AFWG

Weight

DIP16−P-300-2.54A : 1.11 g (typ.)

SOL16−P-150-1.27A : 0.15 g (typ.)

Summary of content (13 pages)

PAGE 1
ULN2003,04APG/AFWG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic ULN2003APG,ULN2003AFWG ULN2004APG,ULN2004AFWG 7-ch Darlington Sink Driver ULN2003APG ULN2004APG The ULN2003APG/AFWG Series are high−voltage, high−current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers.
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ULN2003,04APG/AFWG Schematics (each driver) ULN2003APG/AFWG ULN2004APG/AFWG Note: The input and output parasitic diodes cannot be used as clamp diodes. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCE (SUS) −0.5 to 50 V Output current IOUT 500 mA/ch Input voltage VIN −0.5 to 30 V Clamp diode reverse voltage VR 50 V Clamp diode forward current IF 500 mA Output sustaining voltage Power dissipation APG AFWG PD 1.47 1.
PAGE 3
ULN2003,04APG/AFWG Recommended Operating Conditions (Ta = −40 to 85°C) Characteristic Output sustaining voltage Symbol Test Condition Min Typ. Max Unit VCE (SUS) ⎯ 0 ⎯ 50 V Duty = 10% 0 ⎯ 350 Duty = 50% 0 ⎯ 100 Duty = 10% 0 ⎯ 300 Duty = 50% 0 ⎯ 90 0 ⎯ 24 2.8 ⎯ 24 6.2 ⎯ 24 ⎯ 0 ⎯ 0.7 ⎯ 0 ⎯ 1.
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ULN2003,04APG/AFWG Electrical Characteristics (Ta = 25°C unless otherwise noted) Characteristic Output leakage current Collector−emitter saturation voltage DC Current transfer ratio Input current (output on) ULN2003A ULN2004A Input current (output off) Symbol Test Circuit ICEX 1 VCE (sat) 2 hFE 2 IIN (ON) 3 IIN (OFF) 4 Test Condition Min Typ. Max VCE = 50 V, Ta = 25°C ⎯ ⎯ 50 VCE = 50 V, Ta = 85°C ⎯ ⎯ 100 IOUT = 350 mA, IIN = 500 μA ⎯ 1.3 1.
PAGE 5
ULN2003,04APG/AFWG Test Circuit 1. ICEX 2. VCE (sat), hFE 3. IIN (ON) 4. IIN (OFF) 5. VIN (ON) 6. IR 7.
PAGE 6
ULN2003,04APG/AFWG 8. tON, tOFF Note 1: Pulse width 50 μs, duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: See below Input Condition Type Number R1 VIH ULN2003A 0 3V ULN2004A 0 8V Note 3: CL includes probe and jig capacitance. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed.
PAGE 7
ULN2003,04APG/AFWG 7 2010-12-03
PAGE 8
ULN2003,04APG/AFWG PD – Ta 2.00 (1) Type-APG free air Power dissipation PD (W) 1.75 1.50 1.25 (2) Type-AFWG on PCB (Test Board: JEDEC 2s2p) (1) (2) 1.00 0.75 0.50 0.
PAGE 9
ULN2003,04APG/AFWG Package Dimensions Weight: 1.11 g (typ.
PAGE 10
ULN2003,04APG/AFWG Package Dimensions Weight: 0.15 g (typ.
PAGE 11
ULN2003,04APG/AFWG Notes on Contents 1. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 2. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment.
PAGE 12
ULN2003,04APG/AFWG Points to Remember on Handling of ICs (1) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
PAGE 13
ULN2003,04APG/AFWG RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA.