Datasheet

27mW - 650V SiC Cascode | UF3C065030K3S
Datasheet
Description
Features
Typical Applications
w w
EV charging
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PV inverters
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Switch mode power supplies
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Power factor correction modules
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Motor drives
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Induction heating
w
Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
A
A
I
DM
A
E
AS
mJ
P
tot
W
T
J,max
°C
T
J
, T
STG
°C
T
L
°C
1
Limited by T
J,max
2
Pulse width t
p
limited by T
J,max
3
Starting T
J
= 25°C
62
Max. lead temperature for soldering,
1/8” from case for 5 seconds
250
120
441
-55 to 175
175
Operating and storage temperature
Maximum junction temperature
Value
650
85
DC
T
C
=25°C
Drain-source voltage
T
C
=100°C
Parameter
Test Conditions
T
C
=25°C
Pulsed drain current
2
230
-25 to +25
Gate-source voltage
United Silicon Carbide's cascode products co-package its high-
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads when used with recommended RC-
snubbers, and any application requiring standard gate drive.
Typical on-resistance R
DS(on),typ
of 27mW
Excellent reverse recovery
Continuous drain current
1
I
D
ESD protected, HBM class 2
Maximum operating temperature of 175°C
Low intrinsic capacitance
Low gate charge
Single pulsed avalanche energy
3
L=15mH, I
AS
=4A
Power dissipation
T
C
=25°C
Very low switching losses (required RC-snubber loss negligible
under typical operating conditions)
UF3C065030K3S
TO-247-3L UF3C065030K3S
Part Number Package Marking
3
CASE
1
2
CASE
D (2)
S (3)
G (1)
Rev. B, December 2018
1
For more information go to www.unitedsic.com.