Datasheet

27mW - 650V SiC Cascode | UF3C065030K3S
Datasheet
(a) (b)
(a) (b)
Figure 22 Clamped inductive switching energy including RC snubber energy loss (a) and RC snubber
energy loss (b) as a function of junction temperature at I
D
= 50A and V
DD
=400V.
Figure 23 Clamped inductive switching energy including RC snubber energy loss (a) and RC snubber
energy loss (b) as a function of snubber capacitance at I
D
= 50A, V
DD
=400V, and T
J
= 25°C
0
250
500
750
1000
0 25 50 75 100 125 150 175
Switching Energy (
mJ)
Junction Temperature, T
J
(°C)
Etot
Eon
Eoff
V
GS
= -5V/15V, R
G_ON
= 1.8W, R
G_OFF
= 22W,
FWD: same device with V
GS
=-5V, R
G
=22W, RC
snubber: C
S
= 330pF, R
S
= 5W
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150 175
Snubber R
S
Energy (
mJ)
Junction Temperature, T
J
(°C)
Rs Etot
Rs Eon
Rs Eoff
0
200
400
600
800
1000
0 200 400 600 800
Switching Energy (
mJ)
Snubber Capacitance, C
S
(pF)
Etot
Eon
Eoff
V
GS
= -5V/15V, R
G_ON
= 1.8W,
R
G_OFF
= 22W, FWD: same
device with V
GS
=-5V, R
G
=22W,
RC snubber: R
S
= 5W
0
5
10
15
20
25
30
35
40
0 200 400 600 800
Snubber R
S
Energy (
mJ)
Snubber Capacitance, C
S
(pF)
Rs Etot
Rs Eon
Rs Eoff
Rev. B, December 2018
10
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