Datasheet

ManualsBrandsUnited Silicon Carbide ManualsDiscrete SemiconductorsSiC MOSFET Cascode 1.2kV 80mOhm TO-247-4

Rev. A, January 2019

Description

Features

Typical applications

Package

TO-247-4L

w Typical on-resistance R

DS(on),typ

of 80mW

w Maximum operating temperature of 175°C

w Excellent reverse recovery

w Low gate charge

w Low intrinsic capacitance

w ESD protected, HBM class 2

Part Number

Marking

UF3C120080K4S

w TO-247-4L package for faster switching, clean gate waveforms

w EV charging

w PV inverters

w Switch mode power supplies

w Power factor correction modules

w Motor drives

w Induction heating

United Silicon Carbide's cascode products co-package its high-

performance F3 SiC fast JFETs with a cascode optimized MOSFET to

produce the only standard gate drive SiC device in the market today.

This series exhibits very fast switching using a 4-terminal TO-247-

package and the best reverse recovery characteristics of any device

of similar ratings. These devices are excellent for switching inductive

loads, and any application requiring standard gate drive.

1200V-80mW SiC Cascode

DATASHEET

UF3C120080K4S

CASE

D (1)

S (2)

G (4)

KS (3)

CASE

Datasheet: UF3C120080K4S Rev. A, January 2019 1

Summary of content (10 pages)

PAGE 1
200V-80mW SiC Cascode Rev. A, January 2019 DATASHEET Description UF3C120080K4S CASE CASE D (1) United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings.
PAGE 2
Maximum Ratings Parameter Symbol VDS VGS Drain-source voltage Gate-source voltage Continuous drain current 1 ID Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature IDM EAS Ptot TJ,max TJ, TSTG Max. lead temperature for soldering, 1/8” from case for 5 seconds TL Test Conditions DC TC = 25°C TC = 100°C TC = 25°C L=15mH, IAS =2.8A TC = 25°C Value Units 1200 -25 to +25 33 24 77 58.5 254.
PAGE 3
Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Symbol Test Conditions BVDS VGS=0V, ID=1mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ Max 1200 V VDS=1200V, VGS=0V, TJ=25°C 10 VDS=1200V, VGS=0V, TJ=175°C 50 VDS=0V, TJ=25°C, VGS=-20V / +20V 6 20 VGS=12V, ID=20A, TJ=25°C 80 10
PAGE 4
Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=0V f=100kHz 1500 100 2.
PAGE 5
Typical Performance Diagrams 60 60 50 Vgs = 15V 40 Drain Current, ID (A) Drain Current, ID (A) 50 Vgs = 8V Vgs = 7.5V 30 Vgs = 7V Vgs = 6.5V 20 10 Vgs = 15V 30 Vgs = 8V Vgs = 7V 20 Vgs = 6.5V Vgs = 6V 10 0 0 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 1. Typical output characteristics at TJ = 55°C, tp < 250ms 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms 60 2.
PAGE 6
0 Tj = 175°C Tj = 25°C Tj = - 55°C 250 200 150 100 50 Tj = 25°C Tj = 175°C 40 30 20 10 0 0 0 10 20 30 40 Drain Current, ID (A) 50 60 Figure 5. Typical drain-source on-resistances at VGS = 12V 0 2 3 4 5 6 7 8 Gate-Source Voltage, VGS (V) 9 10 Gate-Source Voltage, VGS (V) 20 5 4 3 2 1 0 -100 1 Figure 6.
PAGE 7
0 0 Vgs = -5V Vgs = 0V Vgs = 5V -10 Vgs = - 5V -5 Drain Current, ID (A) Drain Current, ID (A) -5 Vgs = 8V -15 -20 -25 Vgs = 0V Vgs = 5V -10 Vgs = 8V -15 -20 -25 -30 -30 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 9. 3rd quadrant characteristics at TJ = -55°C -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 10.
PAGE 8
10,000 35 DC Drain Current, ID (A) Capacitance, C (pF) Ciss 1,000 100 Coss 10 30 25 20 15 10 5 Crss 0 1 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Figure 13. Typical capacitances at f = 100kHz and VGS = 0V Figure 14. DC drain current derating 1 Thermal Impedance, ZqJC (°C/W) Power Dissipation, Ptot (W) 300 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 15.
PAGE 9
800 100 10 10ms 100ms 1 1ms DC 600 500 400 Etot Eon Eoff 300 200 100 10ms 0 0.1 1 0 10 100 1000 Drain-Source Voltage, VDS (V) Figure 17. Safe operation area at TC = 25°C, D = 0, Parameter tp 500 250 400 200 300 200 VDD = 800V, VGS = -5V/12V ID = 20A, TJ = 25°C FWD: same device with VGS - 5V, RG = 10W 100 Datasheet: UF3C120080K4S 35 VDD = 800V, VGS = -5V/12V ID = 20A, TJ =25°C FWD: same device with VGS = -5V, RG = 10W 50 0 20 Figure 19.
PAGE 10
250 Etot Eon Eoff 400 300 VGS = -5V/12V, RG_ON = 8.5W, RG_OFF = 20W, FWD: same device with VGS = -5V, RG = 10W 200 VDD = 800V, IS = 20A, di/dt = 2300A/ms, VGS = -5V, RG =10W 200 Qrr (nC) Switching Energy (mJ) 500 150 100 100 50 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 21. Clamped inductive switching energy vs. junction temperature at VDS = 800V and ID = 20A 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 22. Reverse recovery charge Qrr vs.