Datasheet

80mW - 1200V SiC Cascode | UJ3C120080K3S
Datasheet
Description
Features
Typical Applications
w w
EV charging
w w
PV inverters
w w
Switch mode power supplies
w w
Power factor correction modules
w w
Motor drives
w w
Induction heating
Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
A
A
I
DM
A
E
AS
mJ
P
tot
W
T
J,max
°C
T
J
, T
STG
°C
T
L
°C
1
Limited by T
J,max
2
Pulse width t
p
limited by T
J,max
3
Starting T
J
= 25°C
United Silicon Carbide's cascode products co-package its high-
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.
Typical on-resistance R
DS(on),typ
of 80mW
Excellent reverse recovery
Continuous drain current
1
I
D
ESD protected, HBM class 2
Maximum operating temperature of 175°C
Low intrinsic capacitance
Low gate charge
Single pulsed avalanche energy
3
L=15mH, I
AS
=2.8A
Power dissipation
T
C
=25°C
Value
1200
33
DC
T
C
=25°C
Drain-source voltage
T
C
=100°C
Parameter
Test Conditions
T
C
=25°C
Pulsed drain current
2
77
-25 to +25
Gate-source voltage
24
Max. lead temperature for soldering,
1/8” from case for 5 seconds
250
58.5
254.2
-55 to 175
175
Operating and storage temperature
Maximum junction temperature
UJ3C120080K3S
TO-247-3L UJ3C120080K3S
Part Number Package Marking
3
CASE
1
2
CASE
D (2)
S (3)
G (1)
Rev. C, December 2018
1
For more information go to www.unitedsic.com.