50mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet Description CASE D (2) CASE United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Symbol Test Conditions BVDS VGS=0V, ID=1mA IDSS IGSS RDS(on) Value Min 1200 VDS=1200V, VGS=0V, TJ=25°C Typ Max Units V 2 50 mA VDS=1200V, VGS=0V, TJ=175°C VDS=0V, Tj=25°C, VGS=-20V /
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet Typical Performance - Dynamic Parameter Value symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=0V, f=100kHz Effective output capacitance, energy related Coss(er) VDS=0V to 800V, VGS=0V 34 pF Effective output capacitance, time related Coss(tr) VDS=0V to 800V, VGS=0V 68 pF COSS stored energy Eoss VDS=800V, VGS=0V 10.
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet 40 40 30 30 20 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams Vgs = 15V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 10 20 Vgs = 15V Vgs = 7V 10 Vgs = 6.5V Vgs = 6V Vgs = 5.
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet 30 Tj = -55°C Tj = 175°C Tj = 25°C Tj = - 55°C 600 500 25 Drain Current, ID (A) On-Resistance, RDS(on) (mW) 700 400 300 200 Tj = 175°C 20 15 10 5 100 0 0 0 5 10 15 20 25 Drain Current, ID (A) 30 35 0 Figure 5 Typical drain-source on-resistance at V GS = 12V 2 3 4 5 6 7 8 9 Gate-Source Voltage, VGS (V) 10 Gate-Source Voltage, VGS (V) 20 5 4 3 2 1 0 -100 1 Figure 6 Typical transfer characteristics at V DS = 5V 6 Threshold Voltage,
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet 0 0 Vgs = -5V -2 Vgs = - 5V -2 Vgs = 0V -4 Drain Current, ID (A) Drain Current, ID (A) Vgs = 0V Vgs = 5V Vgs = 8V -6 -8 -10 -12 Vgs = 5V -4 Vgs = 8V -6 -8 -10 -12 -14 -14 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 -4 Figure 9 3rd quadrant characteristics at T J = - 55°C -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 10 3rd quadrant characteristics at T J = 25°C 0 25 -2 EOSS (mJ) Drain Current, ID (A) 20 -4 -6 Vgs = - 5V -8
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet 10000 20 DC Drain Current, ID (A) Capacitance, C (pF) 18 Ciss 1000 100 Coss 10 Crss 16 14 12 10 8 6 4 2 1 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) 0 1200 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 13 Typical capacitances at 100kHz and V GS = 0V Figure 14 DC drain current derating Thermal Impedance, ZqJC (°C/W) Power Dissipation, Ptot (W) 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 17
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet 400 1ms Switching Energy (mJ) Drain Current, ID (A) 10 10ms 100ms 1 1ms DC 300 250 Etot Eon Eoff 200 150 100 50 10ms 0 0.1 1 0 10 100 1000 Drain-Source Voltage, VDS (V) Figure 17 Safe operation area T c = 25°C, D = 0, Parameter t p 5 10 15 Drain Current, ID (A) 20 Figure 18 Clamped inductive switching energy vs.
150mW - 1200V SiC Cascode | UJ3C120150K3S Datasheet Switching Energy (mJ) 300 Etot Eon Eoff 250 200 150 VDD = 800V, VGS = -5V/15V RG_ON = 1W, RG_OFF = 20W 100 50 0 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 21 Clamped inductive switching energy vs. junction temperature at I D = 13A Applications Information SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series.