Datasheet

Gen-III | 10A - 1200V SiC Schottky Diode | UJ3D1210KSD .
Datasheet .
Description
Features Typical Applications
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Power converters
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Industrial motor drives
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Switching-mode power supplies
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Power factor correction modules
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w
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AEC-Q101 qualified
Maximum Ratings
Symbol Units
V
R
V
V
RRM
V
V
RSM
V
I
F
A
T
J,max
°C
T
J
, T
STG
°C
T
sold
°C
A
2
s
T
C
= 110°C, t
p
=10ms
19.5/78
Maximum DC forward current
Non-repetitive forward surge current
sine halfwave
I
FSM
T
C
= 25°C, t
p
=10ms
T
C
= 25°C, t
p
= 10ms
Surge peak reverse voltage
1200
1200
70/140
5/10
T
C
= 160.7°C
T
C
= 25°C, t
p
= 10ms
Value (Leg/Device)
1200
Test Conditions
United Silicon Carbide, Inc. offers the 3
rd
generation of high
performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse
recovery charge and 175°C maximum junction temperature, these
diodes are ideally suited for high frequency and high efficiency power
systems with minimum cooling requirements.
Parameter
DC blocking voltage
Repetitive peak reverse voltage, T
j
=25°C
Extremely fast switching not dependent on temperature
No reverse or forward recovery
Enhanced surge current capability, MPS structure
175°C maximum operating junction temperature
Easy paralleling
Excellent thermal performance, Ag sintered
100% UIS tested
A
T
C
= 110°C, t
p
=10ms
63/126
A
T
C
= 110°C, t
p
=10ms
18.6/37.2
A
T
C
= 110°C, t
p
=10ms
525/1050
525/1050
31.8/63.6
Repetitive forward surge current
sine halfwave, D=0.1
I
FRM
P
Tot
T
C
= 25°C
Non-repetitive peak forward current
I
F,max
Power dissipation
T
C
= 160.7°C
175
i
2
t value
i
2
dt
T
C
= 25°C, t
p
=10ms
24.5/98
Operating and storage temperature
Soldering temperatures, wavesoldering only
allowed at leads
-55 to 175
W
Maximum junction temperature
1.6mm from case for
10s
260
136/272
13/26
UJ3D1210KSD
TO-247-3L
UJ3D1210KSD
Part Number
Package
Marking
3
CASE
1
2
3
2
1
CASE
Rev. B, January 2018
1 For more information go to www.unitedsic.com.