User guide

Atlas DCA Pro User Guide December 2012 – Rev 1
Page 39
Appendix B – Summary Technical Specifications
All values are at 25°C unless otherwise specified. Specifications subject to change.
Parameter Min Typ Max Note
Bipolar Transistors
Measurable current gain (H
FE
) range 4 20000 2
H
FE
accuracy (H
FE
<2000) ±3% ±5 H
FE
2,8
H
FE
test voltage (V
CEO
) 3.0V 9.0V 2
H
FE
collector test current 4.75mA 5.00mA 5.25mA
Base current for V
BE
measurement 3.0mA 4.0mA 5.0mA
V
BE
accuracy ±1% ±0.006V 8
V
BE
resolution 3.0mV 6.0mV
V
BE
for Darlington identification 0.95V 1.00V 1.80V 3
V
BE
for Darlington (shunted types) 0.75V 0.80V 1.80V 4
V
BE
threshold for germanium 0.55V
Acceptable V
BE
1.80V
Base-emitter shunt threshold
50kΩ 60kΩ 70kΩ
Acceptable collector leakage 1.5mA 6
Leakage current accuracy ±2% ±0.02mA
MOSFETs/IGBTs
Enhancement mode V
GS(ON)
range 0.0V 10.0V 5
Depletion mode V
GS(ON)
range -5.0V 0.0V 5
V
GS(ON)
accuracy ±2% ±0.01V 5
Drain current at V
GS(ON)
4.75mA 5.00mA 5.25mA
Drain-Source voltage at V
GS(ON)
3.5V 9.0V 5
Acceptable gate-source resistance
8kΩ
IGBT collector saturation threshold 0.40V 9
JFETs
Pinch-off V
GS(OFF)
range -10.0V 2.5V
Pinch-off drain-source current 0.5µA 1.0µA 2.0µA
Turn-on V
GS(ON)
range -9.0V 2.5V
Turn-on drain-source test current 4.75mA 5.00mA 5.25mA
V
GS
accuracy ±2% ±0.01V
Transconductance (g
fs
) range 99mA/V
g
fs
test drain current span 3.0mA to 5.0mA
g
fs
accuracy (<20mA/V) ±5% ±2mA/V
g
fs
accuracy (>20mA/V) ±10% ±5mA/V