Datasheet

2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
V
GS(th)
(V) I
D
(A)
2N6660 3 @ V
GS
= 10 V 0.8 to 2 1.1
VQ1004J/P
60
3.5 @ V
GS
= 10 V 0.8 to 2.5 0.46
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 1.3 W
D Low Threshold: 1.7 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 8 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
Plastic: VQ1004J
Sidebraze: VQ1004P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
2N6660
Device Marking
Top View
VQ1004J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
VQ1004P
“S” fllxxyy
Device Marking
Side View
2N6660
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N6660
VQ1004J VQ1004P VQ1004J/P
Unit
Drain-Source Voltage V
DS
60 60 60
Gate-Source Voltage V
GS
"20 "30 "20
V
Continuous Drain Current
T
C
= 25_C
1.1 0.46 "0.46
Continuous Drain Current
(T
J
= 150_C)
T
C
= 100_C
I
D
0.8 0.26 0.26
A
Pulsed Drain Current
a
I
DM
3 2 2
T
C
= 25_C
6.25 1.3 1.3 2
Power Dissipation
T
C
= 100_C
P
D
2.5 0.52 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170 0.96 0.96 62.5
_
Thermal Resistance, Junction-to-Case R
thJC
20
_C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.