Datasheet

3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
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Vishay General Semiconductor
Revision: 27-Jun-13
1
Document Number: 88888
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Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body

PRIMARY CHARACTERISTICS
Package KBPM
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V, 800 V
I
FSM
80 A
I
R
5 μA
V
F
at I
F
= 3.0 A 1.05 V
T
J
max. 150 °C
Diode variations In-Line
+~~−
Case Style KBPM
+
~
~
−
e4
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 V
Maximum average forward output rectified
current at T
A
= 55 °C (Fig. 1)
I
F(AV)
3.0 A
Peak forward surge current 50 Hz single half 
sine-wave superimposed on rated load
I
FSM
80 A
Rating for fusing (t < 10 ms) I
2
t32A
2
s
Operating junction and storage temperature
range
T
J
, T
STG
- 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum instantaneous
forward voltage drop per
diode
3.0 A V
F
1.05 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
T
J
= 25 °C
I
R
5.0
μA
T
J
= 125 °C 500
Typical junction
capacitance per diode
4.0 V, 
1 MHz
C
J
25 pF