Datasheet

ManualsBrandsVishay ManualsDiodesSwitching Diode 200mA 140V MicroMELF

BAQ333, BAQ334, BAQ335

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 11-Jul-17

Document Number: 85538

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Switching Diodes, Low Leakage Current

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: MicroMELF

Weight: approx. 12 mg

Cathode band color: black

Packaging codes / options:

TR3/10K per 13" reel (8 mm tape), 10K/box

TR/2.5K per 7" reel (8 mm tape), 12.5K/box

FEATURES

• Silicon planar diodes

• Saving space

• Hermetic sealed parts

• Fits onto SOD-323/SOT-23 footprints

• Electrical data identical with the devices BAQ33

to BAQ35, BAQ133 to BAQ135

• Very low reverse current

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Protection circuits, time delay circuits, peak follower

circuits, logarithmic amplifiers

Available

Models

PARTS TABLE

PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS

BAQ333 V

RRM

= 40 V BAQ333-TR3 or BAQ333-TR Single Tape and reel

BAQ334 V

RRM

= 70 V BAQ334-TR3 or BAQ334-TR Single Tape and reel

BAQ335 V

RRM

= 140 V BAQ335-TR3 or BAQ335-TR Single Tape and reel

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Repetitive peak reverse voltage

BAQ333 V

RRM

40 V

BAQ334 V

RRM

70 V

BAQ335 V

RRM

140 V

Reverse voltage

BAQ333 V

30 V

BAQ334 V

60 V

BAQ335 V

125 V

Peak forward surge current t

= 1 μs I

FSM

Forward continuous current I

200 mA

THERMAL CHARACTERISTICS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air

Mounted on epoxy-glass

hard tissue, fig. 4

35 μm copper clad, 0.9 mm

copper area per electrode

thJA

500 K/W

Junction temperature T

175 °C

Storage temperature range T

stg

-65 to +175 °C

Summary of content (4 pages)

PAGE 1
BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Saving space • Hermetic sealed parts • Fits onto SOD-323/SOT-23 footprints • Electrical data identical with the devices BAQ33 to BAQ35, BAQ133 to BAQ135 • Very low reverse current • Material categorization: for definitions of compliance please see www.vishay.
PAGE 2
BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage PART VF E ≤ 300 lx, rated VR IR E ≤ 300 lx, rated VR, Tj = 125 °C Reverse current MIN. TYP. MAX. 1 V 3 nA 0.5 μA BAQ333 IR 0.5 1 nA E ≤ 300 lx, VR = 30 V BAQ334 IR 0.5 1 nA E ≤ 300 lx, VR = 60 V BAQ335 IR 0.
PAGE 3
BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MicroMELF 0.6 (0.024) * 1.1 (0.043) 1.2 (0.047) < 1. 3 surface plan gl 1 (0.039) 5 ( as 0.0 s 53 ) surface plan Cathode indification 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass 2 (0.079) 1.8 (0.071) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Wave soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.4 (0.
PAGE 4
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.