Datasheet

BAS381, BAS382, BAS383
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 02-Jun-17
1
Document Number: 85503
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
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MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Integrated protection ring against static
discharge
•Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• General purpose and switching Schottky barrier diode
• HF-detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
Available
Models
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS
BAS381 V
R
= 40 V BAS381-TR3 or BAS381-TR Single Tape and reel
BAS382 V
R
= 50 V BAS382-TR3 or BAS382-TR Single Tape and reel
BAS383 V
R
= 60V BAS383-TR3 or BAS383-TR Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
BAS381 V
R
40 V
BAS382 V
R
50 V
BAS383 V
R
60 V
Peak forward surge current t
p
= 1 s I
FSM
500 mA
Repetitive peak forward current I
FRM
150 mA
Forward continuous current I
F
30 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
320 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
-65 to +150 °C