Datasheet

ManualsBrandsVishay ManualsDiodesSchottky Diode, 15mA, 60V, DO-35

VISHAY

BAT81S / 82S / 83S

Document Number 85512

Rev. 1.5, 31-Mar-04

Vishay Semiconductors

www.vishay.com

94 9367

Small Signal Schottky Barrier Diodes

Features

• Integrated protection ring against static discharge

• Low capacitance

• Low leakage current

• Low forward voltage drop

• Very low switching time

Applications

General purpose and switching Schottky barrier diode

HF-Detector

Protection circuit

Diode for low currents with a low supply voltage

Small battery charger

Power supplies

DC / DC converter for notebooks

Mechanical Data

Case: DO-35 Glass Case

Weight: max. 130 mg

Packaging Codes/Options:

TR / 10 k per 13 " reel (52 mm tape), 50 k/box

TAP / 10 k per Ammopack (52 mm tape), 50 k/box

Parts Table

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Part Type differentiation Ordering code Remarks

BAT81S V

= 40 V BAT81S-TAP or BAT81S-TR Ammopack / Tape and Reel

BAT82S V

= 50 V BAT82S-TAP or BAT82S-TR Ammopack / Tape and Reel

BAT83S V

= 60 V BAT83S-TAP or BAT83S-TR Ammopack / Tape and Reel

Parameter Test condition Part Symbol Value Unit

Reverse voltage BAT81S V

40 V

BAT82S V

50 V

BAT83S V

60 V

Forward current I

30 mA

Peak forward surge current t

≤ 10 ms I

FSM

500 mA

Repetitive peak forward current t

≤ 1 s I

FRM

150 mA

Summary of content (5 pages)

PAGE 1
BAT81S / 82S / 83S VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time Applications 94 9367 General purpose and switching Schottky barrier diode HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks Mechanical Data Case: DO-35 Glass Case
PAGE 2
BAT81S / 82S / 83S VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C l = 4 mm, TL = constant Junction ambient Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Max Unit VF 330 mV IF = 1 mA VF 410 mV IF = 15 mA VF 1 V Reverse current VR = VRmax IR 200 n
PAGE 3
BAT81S / 82S / 83S VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) Cathode Identification technical drawings according to DIN specifications 94 9366 ∅ 0.55 (0.02) max. ∅ 2.0 (0.08) max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Document Number 85512 Rev. 1.5, 31-Mar-04 26 (1.02) min. 3.9 (0.15) max. 26 (1.02) min. www.vishay.
PAGE 4
BAT81S / 82S / 83S VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 5
Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.