Datasheet

BAT85S
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
1
Document Number: 85513
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
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PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT85S BAT85S-TR or BAT85S-TAP Single diode BAT85S Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
30 V
Peak forward surge current t
p
 10 ms I
FSM
5A
Repetitive peak forward current t
p
< 1 s I
FRM
300 mA
Forward continuous current I
F
200 mA
Average forward current
PCB mounting, I = 4 mm;
V
RWM
= 25 V, T
amb
= 50 °C
I
FAV
200 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, T
L
= constant R
thJA
350 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 0.1 mA V
F
240 mV
I
F
= 1 mA V
F
320 mV
I
F
= 10 mA V
F
400 mV
I
F
= 30 mA V
F
500 mV
I
F
= 100 mA V
F
800 mV
Reserve current V
R
= 25 V I
R
2μA
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time I
F
= 10 mA to I
R
= 10 mA to i
R
= 1 mA t
rr
5ns