Datasheet

BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 12-Jul-17
2
Document Number: 85543
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
300 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
V
R
= 20 V BAV17 I
R
100 nA
V
R
= 50 V BAV18 I
R
100 nA
V
R
= 100 V BAV19 I
R
100 nA
V
R
= 150 V BAV20 I
R
100 nA
V
R
= 200 V BAV21 I
R
100 nA
T
j
= 100 °C, V
R
= 20 V BAV17 I
R
15 μA
T
j
= 100 °C, V
R
= 50 V BAV18 I
R
15 μA
T
j
= 100 °C, V
R
= 100 V BAV19 I
R
15 μA
T
j
= 100 °C, V
R
= 150 V BAV20 I
R
15 μA
T
j
= 100 °C, V
R
= 200 V BAV21 I
R
15 μA
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV17 V
(BR)
25 V
BAV18 V
(BR)
60 V
BAV19 V
(BR)
120 V
BAV20 V
(BR)
200 V
BAV21 V
(BR)
250 V
Diode capacitance V
R
= 0 V, f = 1 MHz, C
D
1.5 pF
Differential forward resistance I
F
= 10 mA r
f
5 Ω
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA
R
L
= 100 Ω
t
rr
50 ns
0 40 80 120 160
0.01
0.1
1
10
1000
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j
= 25 °C