Datasheet

ManualsBrandsVISHAY ManualsPhotodiodes & PhototransistorsPhotodiode 5 mm

BPV10

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 22-Nov-11

Document Number: 81502

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon PIN Photodiode

DESCRIPTION

BPV10 is a PIN photodiode with high speed and high radiant

sensitivity in clear, T-1¾ plastic package. It is sensitive to

visible and near infrared radiation.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Radiant sensitive area (in mm

): 0.78

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• High bandwidth: 250 MHz at V

= 12 V

• Fast response times

• Angle of half sensitivity: ϕ = ± 20°

• Compliant to RoHS Directive 2002/95/EC and in

accordance with WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• High speed photo detector

Note

• Test condition see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8390

PRODUCT SUMMARY

COMPONENT I

(μA) ϕ (deg) λ

0.1

(nm)

BPV10 70 ± 20 380 to 1100

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPV10 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

60 V

Power dissipation T

amb

≤ 25 °C P

215 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 100 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature t ≤ 5 s, 2 mm from body T

260 °C

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm

thJA

350 K/W

Summary of content (5 pages)

PAGE 1
BPV10 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.
PAGE 2
BPV10 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 20 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current Reverse light current MIN. TYP. MAX. UNIT 1.0 1.3 V 1 5 nA 60 V VR = 0 V, f = 1 MHz, E = 0 CD 11 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.
PAGE 3
BPV10 www.vishay.com Vishay Semiconductors S ( λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 Ira - Reverse Light Current (µA) 0.6 0.4 0.2 0 350 550 750 1150 950 λ - Wavelength (nm) 94 8440 Fig. 3 - Reverse Light Current vs. Irradiance 100 0.8 10 1 E e - Irradiance (mW/cm 2) 94 8437 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.
PAGE 4
BPV10 www.vishay.com Vishay Semiconductors 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C ± 0.15 Chip position R 2.45 (sphere) ± 0.15 7.6 ± 0.3 8.6 + 0.2 - 0.1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 Area not plane 0.5 + 0.15 1.5 ± 0.25 1 0.8 < 0.7 34.8 ± 0.5 11.8 ± 0.3 (4.3) Ø5 A 2.54 nom. Drawing-No.: 6.544-5185.02-4 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12199 Rev. 1.
PAGE 5
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.