Datasheet

BPV10
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 22-Nov-11
2
Document Number: 81502
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.0 1.3 V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 20 V, E = 0 I
ro
15nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
11 pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
3.8 pF
Open circuit voltage
E
A
= 1 klx V
O
480 mV
E
e
= 1 mW/cm
2
, λ = 950 nm V
O
450 mV
Short circuit current
E
A
= 1 klx I
K
80 μA
E
e
= 1 mW/cm
2
, λ = 950 nm I
K
65 μA
Reverse light current
E
A
= 1 klx, V
R
= 5 V I
ra
85 μA
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
38 70 μA
Absolute spectral sensitivity V
R
= 5 V, λ = 950 nm s(λ)0.55 A/W
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λ
p
920 nm
Range of spectral bandwidth λ
0.1
380 to 1100 nm
Quantum efficiency λ = 950 nm η 72 %
Noise equivalent power V
R
= 20 V, λ = 950 nm NEP 3 x 10
-14
W/√Hz
Detectivity V
R
= 20 V, λ = 950 nm D 3 x 10
12
cm√Hz/W
Rise time V
R
= 50 V, R
L
= 50 Ω, λ = 820 nm t
r
2.5 ns
Fall time V
R
= 50 V, R
L
= 50 Ω, λ = 820 nm t
f
2.5 ns
20 40 60 80
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
100
94 8436
V
R
= 20 V
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020