Datasheet

ManualsBrandsVISHAY ManualsPhotodiodes & PhototransistorsPhototransistor 5 mm 1080 nm 40 ° BPW 40 =

BPW96B, BPW96C

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 23-Aug-11

Document Number: 81532

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Silicon NPN Phototransistor

DESCRIPTION

BPW96 is a silicon NPN phototransistor with high radiant

sensitivity in clear, T-1¾ plastic package. It is sensitive to

visible and near infrared radiation.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 20°

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Detector in electronic control and drive circuits

Note

• Test condition see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8391

PRODUCT SUMMARY

COMPONENT I

(mA) ϕ (deg) λ

0.1

(nm)

BPW96B 2.5 to 7.5 ± 20 450 to 1080

BPW96C 4.5 to 15 ± 20 450 to 1080

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector emitter voltage V

CEO

70 V

Emitter collector voltage V

ECO

Collector current I

50 mA

Collector peak current t

/T ≤ 0.5, t

≤ 10 ms I

100 mA

Power dissipation T

amb

≤ 47 °C P

150 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 100 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature t ≤ 3 s T

260 °C

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm

thJA

350 K/W

Summary of content (5 pages)

PAGE 1
BPW96B, BPW96C www.vishay.
PAGE 2
BPW96B, BPW96C www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 200 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN.
PAGE 3
BPW96B, BPW96C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ica - Collector Light Current (mA) 10 103 VCE = 20 V 102 101 10 20 40 60 Ica rel - Relative Collector Current 2.0 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 1 100 10 V CE - Collector Emitter Voltage (V) 10 8 f = 1 MHz 6 4 2 0 0.1 1 100 10 V CE - Collector Emitter Voltage (V) Fig.
PAGE 4
BPW96B, BPW96C www.vishay.com Vishay Semiconductors 10° 20° 0.8 0.6 0.4 0.2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 1.0 Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 0° 80° 0 400 600 800 1000 0.6 λ - Wavelength (nm) 94 8348 0.4 0.2 0 94 8299 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement 5.75 ± 0.
PAGE 5
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.