Datasheet

BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
2
Document Number: 81532
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
0
40
80
120
160
200
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100806040200
94 8300
R
thJA
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λ
p
850 nm
Range of spectral bandwidth λ
0.1
450 to 1080 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
, λ = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
on
2.0 μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
off
2.3 μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω f
c
180 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
BPW96B I
ca
2.5 4.5 7.5 mA
BPW96C I
ca
4.5 8 15 mA