Datasheet

BPW41N
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Aug-11
1
Document Number: 81522
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
BPW41N is a PIN photodiode with high speed and high
radiant sensitivity in a black, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 5 x 4 x 6.8
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8480
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
BPW41N 45 ± 65 870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW41N Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W