Datasheet

BPW41N
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Aug-11
2
Document Number: 81522
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 2 - Reverse Light Current vs. Irradiance
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit Voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
- 2.6 mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
38 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
43 45 μA
Angle of half sensitivity
ϕ
± 65 deg
Wavelength of peak sensitivity λ
p
950 nm
Range of spectral bandwidth λ
0.5
870 to 1050 nm
Noise equivalent power V
R
= 10 V, λ = 950 nm NEP 4 x 10
-14
W/√ Hz
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
100 ns
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative
Reverse
Light Current
T - Ambient Temperature (°C)
amb
ra rel
0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm²)
10
94 8414
V
R
= 5 V
= 950 nm
λ
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
94 8415
I - Reverse Light Current (µA)
ra
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
0.1
100
110