Datasheet

BPW46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 03-Jun-14
2
Document Number: 81524
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
60 V
Reverse dark current V
R
= 10 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
70 pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
25 40 pF
Open circuit voltage E
e
= 1 mW/cm
2
,  = 950 nm V
o
350 mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
,  = 950 nm TK
Vo
-2.6 mV/K
Short circuit current
E
A
= 1 klx I
k
70 μA
E
e
= 1 mW/cm
2
,  = 950 nm I
k
47 μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
,  = 950 nm TK
Ik
0.1 %/K
Reverse light current
E
A
= 1 klx, V
R
= 5 V I
ra
75 μA
E
e
= 1 mW/cm
2
,  = 950 nm,
V
R
= 5 V
I
ra
40 50 μA
Angle of half sensitivity  ± 65 deg
Wavelength of peak sensitivity 
p
900 nm
Range of spectral bandwidth 
0.1
430 to 1100 nm
Noise equivalent power V
R
= 10 V,  = 950 nm NEP 4 x 10
-14
W/Hz
Rise time V
R
= 10 V, R
L
= 1 k,  = 820 nm t
r
100 ns
Fall time V
R
= 10 V, R
L
= 1 k,  = 820 nm t
f
100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020