Datasheet

BZT03-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 29-Nov-11
1
Document Number: 85599
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Zener Diodes with Surge Current Specification
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Compliant to RoHS Directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Medium power voltage regulators and medium power
transient suppression circuits
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 6.2 to 300 V
Test current I
ZT
2 to 100 mA
V
Z
specification Pulse current
Int. construction Single
949539
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT03-series BZT03-series-TR 5000 per 10" reel
BZT03-series BZT03-series-TAP
5000 per ammopack
(52 mm tape)
25 000/box
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
SOD-57 369 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
I = 10 mm, T
L
= 25 °C P
tot
3250
mW
T
amb
= 25 °C P
tot
1300
Repetitive peak reverse power
dissipation
P
ZRM
10 W
Non repetitive peak surge power
dissipation
t
p
= 100 μs, T
j
= 25 °C P
ZSM
600 W
Junction to ambient air
I = 10 mm, T
L
= constant R
thJA
46
K/W
On PC board with spacing 25 mm R
thJA
100
Junction temperature
T
j
175 °C
Storage temperature range
T
S
- 65 to + 175 °C
Forward voltage (max.) I
F
= 0.5 A V
F
1.2 V