Datasheet

ManualsBrandsVishay ManualsDiodesZener Diode 300mW 11V 100nA SOT-23

BZX84-Series

www.vishay.com

Vishay Semiconductors

Rev. 2.0, 28-Feb-13

Document Number: 85763

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Zener Diodes

FEATURES

• Silicon planar Zener diodes

• The Zener voltages are graded according to the

international E24 standard. Standard Zener

voltage tolerance is ± 5 %, indicated by the “C”

in the ordering code. Replace “C” with “B” for

± 2 % tolerance.

• AEC-Q101 qualified

• ESD capability acc. to AEC-Q101:

human body model: > 8 kV,

machine model: > 800 V

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

range nom. 2.4 to 75 V

Test current I

2; 5 mA

specification Pulse current

Int. construction Single

20421

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

BZX84-series

BZX84C2V4-E3-08 to BZX84C75-E3-08

3000 (8 mm tape on 7" reel) 15 000

BZX84B2V4-E3-08 to BZX84B75-E3-08

BZX84C2V4-HE3-08 to BZX84C75-HE3-08

BZX84B2V4-HE3-08 to BZX84B75-HE3-08

BZX84C2V4-E3-18 to BZX84C75-E3-18

10 000 (8 mm tape on 13" reel) 10 000

BZX84B2V4-E3-18 to BZX84B75-E3-18

BZX84C2V4-HE3-18 to BZX84C75-HE3-18

BZX84B2V4-HE3-18 to BZX84B75-HE3-18

PACKAGE

PACKAGE NAME WEIGHT

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING CONDITIONS

SOT-23 8.8 mg UL 94 V-0

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation

amb

= 25 °C, device on fiberglass substrate,

acc. layout on page 7

tot

300 mW

Thermal resistance junction to ambient air

amb

= 25 °C, device on fiberglass substrate,

acc. layout on page 7

thJA

420 K/W

Junction temperature

150 °C

Storage temperature range

stg

- 65 to + 150 °C

Operating temperature range

- 55 to + 150 °C

Summary of content (8 pages)

PAGE 1
BZX84-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for ± 2 % tolerance. 2 1 20421 • AEC-Q101 qualified • ESD capability acc.
PAGE 2
BZX84-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 ZZK at IZT2 VZ at IZT1  10-4/°C IZT2 mA μA V MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84C2V4 Z11 2.2 2.4 2.6 5 1 50 1 100 275 -9 -4 BZX84C2V7 Z12 2.5 2.7 2.
PAGE 3
BZX84-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE f = 1 kHz TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 ZZK at IZT2 VZ at IZT1  10-4/°C IZT2 mA μA V MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84B2V4 Z50 2.35 2.4 2.45 5 1 50 1 100 275 -9 -4 BZX84B2V7 Z51 2.65 2.7 2.
PAGE 4
BZX84-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 Ω 100 TJ = 25 °C 102 IF 5 4 10 3 rzj TJ = 100 °C 1 10-1 33 2 27 22 10 TJ = 25 °C 10-2 18 15 5 4 10-3 12 3 10 2 10-4 10-5 0 6.8/8.2 6.2 1 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 Fig. 1 - Forward Characteristics 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs.
PAGE 5
BZX84-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ 20 60 40 Fig. 7 - Dynamic Resistance vs. Zener Voltage 80 100 V VZ 18125 Fig. 10 - Temperature Dependence of Zener Voltage vs.
PAGE 6
BZX84-Series www.vishay.com Vishay Semiconductors mA 30 V 5 10 12 ΔVZ = Rzth x IZ Tj = 25 °C 4 lZ Δ VZ 3 15 20 18 IZ = 5 mA 22 2 27 Test 10 current IZ 5 mA 1 33 36 IZ = 2 mA 0 0 0 20 40 60 0 100 V 80 Tj = 25 °C 40 lZ 8.2 8 lZ 30 6 20 4 Test current IZ 5 mA 10 40 V Tj = 25 °C 6.8 3.3 4.7 30 VZ mA 10 3.9 5.6 2.7 20 Fig. 15 - Breakdown Characteristics Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs.
PAGE 7
BZX84-Series www.vishay.com Vishay Semiconductors LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.
PAGE 8
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