Datasheet

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Document Number: 83606
2 Rev. 1.5, 09-Nov-05
CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter base breakdown voltage BV
EBO
7.0 V
Collector current
I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector referred to climate
DIN 50014, part 2, Nov. 74
t = 1.0 s V
ISO
5300 V
RMS
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Isolation thickness between
emitter and detector
≥ 0.4 mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Soldering temperature
max. 10 s, dip soldering: distance to
seating plane ≥ 1.5 mm
T
sld
260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Breakdown voltage I
R
= 10 mA V
BR
6.0 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance R
th
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
5.2 pF
Collector base capacitance V
CB
= 5.0 V, f = 1.0 MHz C
CB
6.5 pF
Emitter base capacitance V
EB
= 5.0 V, f = 1.0 MHz C
EB
7.5 pF
Thermal resistance R
th
500 K/W
COUPLER
Collector emitter, saturation voltage V
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
Collector emitter, leakage current V
CE
= 10 V
CNY17-1 I
CEO
2.0 50 nA
CNY17-2 I
CEO
2.0 50 nA
CNY17-3 I
CEO
5.0 100 nA
CNY17-4 I
CEO
5.0 100 nA