Datasheet

CNY17F
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-Jan-12
2
Document Number: 83607
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through
hole parts (DIP).
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
DC forward current I
F
60 mA
Surge forward current t ≤ 10 μs I
FSM
2.5 A
Power dissipation P
diss
70 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Output power dissipation P
diss
150 mW
COUPLER
Isolation test voltage between emitter and
detector
V
ISO
5000 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter and detector ≥ 0.4 mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance V
IO
= 500 V R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 150 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.39 1.65 V
Breakdown voltage I
R
= 10 μA V
BR
6V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
5.2 pF
Base collector capacitance V
CE
= 5 V, f = 1 MHz C
BC
6.5 pF
Emitter base capacitance V
CE
= 5 V, f = 1 MHz C
EB
7.5 pF
COUPLER
Collector emitter, saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
Collector emitter, leakage current V
CE
= 10 V
CNY17F-1 I
CEO
250nA
CNY17F-2 I
CEO
250nA
CNY17F-3 I
CEO
5 100 nA
CNY17F-4 I
CEO
5 100 nA