Datasheet

ManualsBrandsVISHAY ManualsIR ComponentsIR emitter 950 nm 22 ° 5 mm Radial lead TSUS 5401 (CQY99)

TSUS5400, TSUS5401, TSUS5402

www.vishay.com

Vishay Semiconductors

Rev. 1.8, 24-Aug-11

Document Number: 81056

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Infrared Emitting Diode, 950 nm, GaAs

DESCRIPTION

TSUS5400 is an infrared, 950 nm emitting diode in GaAs

technology molded in a blue-gray tinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Leads with stand-off

• Peak wavelength: λ

= 950 nm

• High reliability

• Angle of half intensity: ϕ = ± 22°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared remote control and free air transmission systems

with low forward voltage and small package requirements

• Emitter in transmissive sensors

• Emitter in reflective sensors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8390

PRODUCT SUMMARY

COMPONENT I

(mW/sr) ϕ (deg) λ

(nm) t

(ns)

TSUS5400 14 ± 22 950 800

TSUS5401 17 ± 22 950 800

TSUS5402 20 ± 22 950 800

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSUS5400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

TSUS5401 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

TSUS5402 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

150 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

300 mA

Surge forward current t

= 100 μs I

FSM

2.5 A

Power dissipation P

170 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 85 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature t ≤ 5 s, 2 mm from case T

260 °C

Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R

thJA

230 K/W

Summary of content (5 pages)

PAGE 1
TSUS5400, TSUS5401, TSUS5402 www.vishay.
PAGE 2
TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 20 100 80 60 RthJA = 230 K/W 40 20 0 0 10 21313 20 30 40 50 60 70 80 90 0 100 0 Tamb - Ambient Temperature (°C) 21314 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs.
PAGE 3
TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ie - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 -2 10 94 7989 TSUS 5401 TSUS 5402 100 TSUS5400 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 0 10 2 10 1 10 2 10 3 I F - Forward Current (mA) 94 7997 Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 4 Fig.
PAGE 4
TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 IF = 100 mA 0 900 80° 0.6 1000 950 λ - Wavelength (nm) 94 7994 0.4 0.2 0 0.2 0.4 0.6 94 7999 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C ± 0.15 A ± 0.15 7.7 < 0.7 ± 0.
PAGE 5
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