Datasheet

GSD2004W
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Feb-18
1
Document Number: 85729
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, High Voltage
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode, especially suited for
applications requiring high voltage capability
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
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Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
GSD2004W
GSD2004W-E3-08 or GSD2004W-E3-18
GSD2004W-HE3-08 or GSD2004W-HE3-18
Single B6 Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
240 V
Repetitive peak reverse voltage V
RRM
300 V
Forward current (continuous) I
F
225 mA
Repetitive peak forward current I
FRM
625 mA
Non-repetitive peak forward current
t
p
= 1 μs I
FSM
4A
t
p
= 1 s I
FSM
1A
Power dissipation
(1)
P
tot
350 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typical thermal resistance junction to ambient air
(1)
R
thJA
357 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C