User guide

ManualsBrandsVishay ManualsSensorsHFA25PB60

Document Number: 93084 For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 30-Jul-08 1

HEXFRED

Ultrafast Soft Recovery Diode, 25 A

HFA25PB60

Vishay High Power Products

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

RRM

• Very low Q

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA25PB60 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 600 V and 25 A continuous current, the

HFA25PB60 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

product line features

extremely low values of peak recovery current (I

RRM

) and

does not exhibit any tendency to “snap-off” during the

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA25PB60 is ideally suited

for applications in power supplies and power conversion

systems (such as inverters), motor drives, and many other

similar applications where high speed, high efficiency is

needed.

PRODUCT SUMMARY

600 V

at 25 A at 25 °C 1.7 V

F(AV)

25 A

(typical) 23 ns

(maximum) 150 °C

(typical) 112 nC

(rec)M

/dt (typical) 250 A/µs

RRM

10 A

TO-247AC modified

Cathode

to base

Cathode

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

600 V

Maximum continuous forward current I

= 100 °C 25

ASingle pulse forward current I

FSM

225

Maximum repetitive forward current I

FRM

100

Maximum power dissipation P

= 25 °C 151

= 100 °C 60

Operating junction and storage temperature range T

, T

Stg

- 55 to + 150 °C

Summary of content (7 pages)

PAGE 1
HFA25PB60 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • BENEFITS Cathode to base • • • • • 4 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level 3 Anode 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA25PB60 is a state of the art ultrafast recove
PAGE 2
HFA25PB60 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 50 A IF = 25 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 UNITS V IF = 25 A, TJ = 125 °C - 1.3 1.7 VR = VR rated - 1.
PAGE 3
HFA25PB60 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 25 A 10000 T = 150°C J 1000 100 TJ = 125°C 100 10 1 0.1 TJ = 150°C TJ = 25°C 0.01 0 100 T = 125°C 200 300 400 Reverse Voltage - V J 500 600 R (V) T = 25°C J Fig. 2 - Typical Reverse Current vs. Reverse Voltage 10 1000 A TJ = 25°C 100 1 0.6 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) 10 1 10 100 1000 Reverse Voltage - V R (V) Fig. 1 - Maximum Forward Voltage Drop vs.
PAGE 4
HFA25PB60 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A 1400 140 VR = 200V TJ = 125°C TJ = 25°C I F = 50A I F = 25A 120 1200 I F = 10A I F = 50A 1000 100 I F = 25A 80 800 60 600 40 400 20 200 VR = 200V TJ = 125°C TJ = 25°C 0 100 I F = 10A di f /dt - (A/µs) 1000 0 100 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 30 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs.
PAGE 5
HFA25PB60 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 25 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.
PAGE 6
HFA25PB60 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 25 A ORDERING INFORMATION TABLE Device code HF A 25 PB 60 - 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator: A = Electron irradiated B = Platinum diffused 3 - Current rating (25 = 25 A) 4 - Package outline (PB = TO-247, 2 pins) 5 - Voltage rating (60 = 600 V) 6 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.
PAGE 7
Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.