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Document Number: 93090 For technical questions, contact: diodes-tech@vishay.com

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Revision: 25-Aug-08 1

HEXFRED

Ultrafast Soft Recovery Diode, 30 A

HFA30PB120

Vishay High Power Products

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

RRM

• Very low Q

• Guaranteed avalanche

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA30PB120 is a state of the art center tap ultrafast

recovery diode. Employing the latest in epitaxial construction

and advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 30 A continuous current, the

HFA30PB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

product line features

extremely low values of peak recovery current (I

RRM

) and

does not exhibit any tendency to “snap-off” during the

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA30PB120 is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

1200 V

at 30 A at 25 °C 4.1 V

F(AV)

30 A

(typical) 47 ns

(maximum) 150 °C

(typical) 120 nC

(rec)M

/dt (typical) at 125 °C 240 A/µs

RRM

(typical) 4.7 A

TO-247AC modified

Base

common

cathode

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

1200 V

Maximum continuous forward current I

= 100 °C 30

ASingle pulse forward current I

FSM

120

Maximum repetitive forward current I

FRM

Maximum power dissipation P

= 25 °C 350

= 100 °C 140

Operating junction and storage temperature range T

, T

Stg

- 55 to + 150 °C

Summary of content (7 pages)

PAGE 1
HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A FEATURES • • • • • • • Base common cathode BENEFITS • • • • • 2 1 Anode 1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating conditions Designed and qualified for industrial level Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 3 Anode 2 HFA30PB120 is a state o
PAGE 2
HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 30 A Maximum forward voltage VFM IF = 60 A See fig. 1 IF = 30 A, TJ = 125 °C VR = VR rated MIN. TYP. MAX. 1200 - - - 2.4 4.1 - 3.1 5.7 - 2.3 4.0 UNITS V - 1.3 40 - 1.1 4000 See fig.
PAGE 3
HFA30PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 30 A Reverse Current - I R (µA) 10 100 T J = 125°C 1 T J = 25°C 0.1 200 400 600 800 1000 1200 Reverse Voltage - V R (V) 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1000 Tj = 125°C Junction Capacitance - CT (pF) IF, Instantaneous Forward Current (A) Tj = 175°C T J = 150°C Tj = 25°C 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.
PAGE 4
HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A 3000 300 VR = 390V T J = 25°C _____ 275 IF = 60A T J = 125°C ---------- 250 IF = 30A 2500 VR = 390V I = 60A TJ = 25°C _____ F I TJ = 125°C ---------- F = 30A IF = 15A IF = 15A 225 2000 200 trr (ns) Qrr (nC) 175 150 125 1500 1000 100 75 500 50 25 0 0 100 150 200 250 300 350 400 450 500 100 300 400 500 diF /dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig.
PAGE 5
HFA30PB120 HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 30 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.
PAGE 6
HFA30PB120 Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 30 A ORDERING INFORMATION TABLE Device code HF A 30 PB 120 - 1 2 3 4 5 6 1 - HEXFRED® family 2 - Process designator: A = Electron irradiated B = Platinum diffused 3 - Current rating (30 = 30 A) 4 - Package outline (PB = TO-247, 2 pins) 5 - Voltage rating (120 = 1200 V) 6 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.
PAGE 7
Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.