Datasheet

ManualsBrandsVishay ManualsOpto- & Photo CouplersOptocoupler SOIC-8

VISHAY

IL215AT/ IL216AT/ IL217AT

Document Number 83616

Rev. 1.6, 19-Apr-04

Vishay Semiconductors

www.vishay.com

i179083

Optocoupler, Phototransistor Output, Low Input Current, With

Base Connection

Features

• High Current Transfer Ratio

• Isolation Test Voltage, 3000 V

RMS

• Industry Standard SOIC-8 Surface Mountable

Package

• Compatible with Dual Wave, Vapor Phase and IR

Reflow Soldering

Agency Approvals

• UL - File No. E52744 System Code Y

• DIN EN 60747-5-2(VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

Description

The IL215AT/ IL216AT/ IL217AT are optically cou-

pled pairs with a Gallium Arsenide infrared LED and a

silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the device

while maintaining a high degree of electrical isolation

between input and output. The IL215AT/ IL216AT/

IL217AT comes in a standard SOIC-8 small outline

package for surface mounting which makes it ideally

suited for high density applications with limited space.

In addition to eliminating through hole requirements,

this package conforms to standards for surface

mounted devices.

The high CTR at low input current is designed for low

power consumption requirements such as CMOS

microprocessor interfaces.

Order Information

Available only on Tape and Reel

(Conforms to EIA Standard RS481A)

For additional information on the available options refer to

Option Information.

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Part Remarks

IL215AT CTR > 20 %, SOIC-8

IL216AT CTR > 50 %, SOIC-8

IL217AT CTR > 100 %, SOIC-8

Parameter Test condition Symbol Value Unit

Peak reverse voltage V

6.0 V

Forward continuous current I

60 mA

Power dissipation P

diss

90 mW

Derate linearly from 25 °C 1.2 mW/°C

Summary of content (8 pages)

PAGE 1
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, With Base Connection Features • High Current Transfer Ratio • Isolation Test Voltage, 3000 VRMS • Industry Standard SOIC-8 Surface Mountable Package • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Agency Approvals A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E i179083 • UL - File No.
PAGE 2
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 30 V Emitter-collector breakdown voltage BVECO 7.0 V BVCBO 70 V ICMAX DC 50 mA ICMAX 100 mA Pdiss 150 mW 2.0 mW/°C Collector-base breakdown voltage ICMAX DC t < 1.0 ms ICMAX Power dissipation Derate linearly from 25 °C Coupler Parameter Symbol Value Unit Ptot 240 mW 3.
PAGE 3
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors Current Transfer Ratio Parameter Test condition DC Current Transfer Ratio IF = 1.0 mA, VCE = 5.0 V Part Symbol Min Typ. IL215AT CTRDC 20 50 Max Unit % IL216AT CTRDC 50 80 % IL217AT CTRDC 100 130 % Switching Characteristics Parameter Test condition IC = 2.0 mA, RL = 100 Ω, VCC = 10 V Switching time Symbol Min Typ. ton, toff Max Unit µs 3.0 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 150 1.
PAGE 4
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors 2.0 NCTRce - Normalized CTRce 1000 Icb - Collector-base Current - µA Vcb = 9.3 V 100 10 1 1.5 .1 1 10 I F =1 mA 1.0 0.5 V ce = .4 .1 100 I F - LED Current - mA iil215at_05 1 10 100 I F - LED Current - mA iil215at_08 Fig. 5 Collector-Base Photocurrent vs. LED Current Fig. 8 Normalized Non-Saturated and Saturated CTRCE vs.
PAGE 5
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors 1000 1.2 NHFE - Normalized HFE Icb - Collector-base photocurrent - µa Vcb = 9.3 V 100 10 1 1.0 25°C -20°C 0.8 0.6 0.4 .01 .1 1 10 100 1 1000 I F - LED Current - mA iil215at_11 100 4.7 kΩ Input: IF =10m A Pulse width=100 mS Duty cycle=50% 50 Vcc = 5 V Vth = 1.5 V Switching time (µs) 15 2 kΩ 5 0 F T OF 10 5 TON 1.0 5 0 10 15 20 10K iil215at_15 iil215at_12 Fig. 12 High to Low Propagation Delay vs.
PAGE 6
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors INPUT 0 VCC=5 V toff ton tpdoff tpdon Input RL V OUT td OUTPUT tr 0 ts tr 10% 10% 50% 50% 90% 90% iil215at_17 Fig. 17 Switching Time Test Schematic and Waveform Package Dimensions in Inches (mm) R .010 (.13) .120± .005 (3.05± .13) .240 (6.10) .154± .005 CL (3.91± .13) .050 (1.27) .036 (.91) .170 (4.32) .260 (6.6) .016 (.41) Pin One ID .192± .005 (4.88± .13) .004 (.10) .008 (.20) ISO Method A .014 (.36) .015± .002 (.
PAGE 7
IL215AT/ IL216AT/ IL217AT VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 8
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.