Datasheet

IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Dec-10
1
Document Number: 83615
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
DESCRIPTION
The IL211AT, IL212AT, IL213AT are optically coupled pairs
with a gallium arsenide infrared LED and silicon NPN
phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a high
degree of electrical isolation between input and output.
The IL211AT, IL212AT, IL213AT comes in a standard
SOIC-8 small outline package for surface mounting which
makes it ideally suited for high density applications with
limited space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A choice of 20 %, 50 %, and 100 % minimum CTR at
I
F
= 10 mA makes these optocouplers suitable for a variety
of different applications.
FEATURES
• Isolation test voltage, 4000 V
RMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)
(1)
• DIN EN 60747-5-5 (pending)
(1)
Note
(1)
Available upon request, as option 1
i179002-1
1
2
3
4
A
K
NC
NC
8
7
6
5
NC
B
C
E
V
DE
i179025
ORDERING INFORMATION
IL21#AT
PART NUMBER
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA
UL, cUL > 20 > 50 > 100
SOIC-8
IL211AT IL212AT IL213AT
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6V
Forward continuous current I
F
60 mA
Power dissipation P
diss
90 mW
Derate linearly from 25 °C 1.2 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
30 V
Emitter collector breakdown voltage BV
ECO
7V
Collector base breakdown voltage V
CBO
70 V
I
CMAX. DC
I
CMAX. DC
50 mA
I
CMAX.
t < 1 ms I
CMAX.
100 mA
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 2mW/°C
SOIC-8
6.1 mm