Datasheet

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2
Document Number 83654
Rev. 1.3, 19-Apr-04
VISHAY
ILD621/ GB/ ILQ621/ GB
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA mA
Surge current I
FSM
1.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
Parameter Test condition Symbol Value Unit
Collector -emitter reverse
voltage
V
ECO
70 V
Collector current I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Derate from 25 °C - 2.0 mW/°C
Parameter Test condition Part Symbol Value Unit
Isolation test voltage t = 1.0 sec. V
ISO
5300 V
RMS
Package dissipation ILD621 400 mW
ILD621GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation ILQ621 500 mW
ILQ621GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to +150 °C
Operating temperature T
amb
- 55 to +100 °C
Junction temperature T
j
100 °C
Soldering temperature 2.0 mm from case bottom T
sld
260 °C