Datasheet

VISHAY
ILD621/ GB/ ILQ621/ GB
Document Number 83654
Rev. 1.3, 19-Apr-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 10 mA V
F
1.0 1.15 1.3 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
F
= 0, f = 1.0 MHz C
O
40 pF
Thermal resistance, Junction to
lead
R
THJL
750 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector-emitter leakage
current
V
CE
= 24 V I
CEO
10 100 nA
I
CEO
20 50 µA
Thermal resistance, Junction to
lead
R
THJL
500 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Capacitance (input-output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V
10
12
Ω
Channel to channel insulation 500 VAC
Collector-emitter saturation
voltage
I
F
= 8.0 mA, I
CE
= 2.4 mA ILD621
ILQ621
V
CEsat
0.4 V
I
F
= 1.0 mA, I
CE
= 0.2 mA ILD621GB
ILQ621GB
V
CEsat
0.4 V
Parameter Test condition Part Symbol Min Typ. Max Unit
Channel/Channel CTR match I
F
= 5.0 mA, V
CE
= 5.0 V CTRX/
CTRY
1 to 1 3 to 1
Current Transfer Ratio
(collector-emitter saturated)
I
F
= 1.0 mA, V
CE
= 0.4 V ILD621
ILQ621
CTR
CEs
at
60 %
ILD621GB
ILQ621GB
CTR
CEs
at
30 %
Current Transfer Ratio
(collector-emitter)
I
F
= 5.0 mA, V
CE
= 5.0 V ILD621
ILQ621
CTR
CE
50 80 600 %
ILD621GB
ILQ621GB
CTR
CE
100 200 600 %