Datasheet

ILD217T
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 23-Jul-14
1
Document Number: 84268
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Dual Channel,
SOIC-8 Package
DESCRIPTION
The ILD217T are optically coupled pairs with a gallium
arsenide infrared LED and a silicon NPN phototransistor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output. The ILD217T come in a
standard SOIC-8 small outline package for surface
mounting which makes it ideally suited for high density
applications with limited space. In addition to eliminating
through-holes requirements, this package conforms to
standards for surface mounted devices.
The high BV
CEO
of 70 V gives a higher safety margin
compared to the industry standard of 30 V.
FEATURES
• Two channel coupler
• SOIC-8 surface mountable package
• Standard lead spacing of 0.05"
• Available only on tape and reel option
(conforms to EIA standard 481-2)
• Isolation test voltage, 4000 V
RMS
• Compatible with dual wave, vapor phase and IR reflow
soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
i179018-2
A1
C2
A3
C4
8C
7E
6C
5E
i179025
ORDERING INFORMATION
ILD217T
PART NUMBER
AGENCY CERTIFIED/PACKAGE
CTR (%)
1 mA
UL, cUL ≥ 100
SOIC-8 ILD217T
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6V
Peak pulsed current 1 μs, 300 pps 1 A
Continuous forward current per channel I
F
30 mA
Power dissipation P
diss
50 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter collector breakdown voltage BV
ECO
7V
Power dissipation per channel P
diss
125 mW
SIOC-8
6.1 mm