Datasheet

Document Number: 83648 For technical questions, contact: [e-mail]
www.vishay.com
Rev. 1.6, 20-Apr-07 1
Optocoupler, Photodarlington Output, Dual Channel,
SOIC-8 Package
ILD223T
Vishay Semiconductors
DESCRIPTION
The ILD233T is a high current transfer ratio (CTR)
optocoupler. It has a gallium arsenide infrared LED emitter
and silicon NPN photodarlington transistor detector.
This device has CTRs tested at an LED current of 1.0 mA.
This low drive current permits easy interfacing from CMOS to
LSTTL or TTL.
The ILD223T is constructed in a standard SOIC-8 foot print
which makes it ideally suited for high density applications. In
addition to eliminating through hole requirements, this
package conforms to standards for surface mounted
devices.
FEATURES
• Two channel optocoupler
• High current transfer ratio at I
F
= 1.0 mA,
500 % minimum
• Isolation test voltage, 4000 V
RMS
• Electrical specifications similar to standard 6-pin
coupler
• Compatible with dual wave, vapor phase and IR reflow
soldering
• SOIC-8 surface mountable package
• Standard lead spacing, 0.05"
• Available only on tape and reel (conforms to EIA
standard 481-2)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884) available with option 1
i179042
A1
C
2
A3
C4
8 C
7E
6C
5E
ORDER INFORMATION
PART REMARKS
ILD223T CTR > 500 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6.0 V
Peak pulsed current 1.0 µs, 300 pps 3.0 A
Continuous forward current per channel 30 mA
Power dissipation P
diss
45 mW
Derate linearly from 25 °C 0.4 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
30 V
Emitter collector breakdown voltage BV
ECO
5.0 V
Power dissipation per channel P
diss
75 mW
Derate linearly from 25 °C 3.1 mW/°C