Datasheet

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Document Number: 83654
2 Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Note
For additional information on the available options refer to option information.
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ILD621-X007 CTR > 50 %, dual, SMD-8 (option 7)
ILD621-X009 CTR > 50 %, dual, SMD-8 (option 9)
ILD621GB-X007 CTR > 100 %, dual, SMD-8 (option 7)
ILQ621-X006 CTR > 50 %, quad, DIP-16 400 mil
ILQ621-X007 CTR > 50 %, quad, SMD-16 (option 7)
ILQ621-X009 CTR > 50 %, quad, SMD-16 (option 9)
ILQ621GB-X006 CTR > 100 %, quad, DIP-16 400 mil
ILQ621GB-X007 CTR > 100 %, quad, SMD-16 (option 7)
ILQ621GB-X009 CTR > 100 %, quad, SMD-16 (option 9)
ORDER INFORMATION
PART REMARKS
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
1.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter reverse voltage V
ECO
70 V
Collector current
I
C
50 mA
t < 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
Derate from 25 °C - 2.0 mW/°C
COUPLER
Isolation test voltage t = 1.0 s V
ISO
5300 V
RMS
Package dissipation
ILD621 400 mW
ILD621GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation
ILQ621 500 mW
ILQ621GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(2)
2.0 mm from case bottom T
sld
260 °C