Datasheet
Document Number: 83654 For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.5, 20-Dec-07 3
ILD621/ILD621GB/ILQ621/ILQ621GB
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.01.151.3 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
40 pF
Thermal resistance, junction to lead R
THJL
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector emitter leakage current V
CE
= 24 V
I
CEO
10 100 nA
I
CEO
20 50 µA
Thermal resistance, junction to lead R
THJL
500 K/W
COUPLER
Capacitance (input to output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V 10
12
Ω
Channel to channel insulation 500 VAC
Collector emitter saturation voltage
I
F
= 8.0 mA, I
CE
= 2.4 mA
ILD621
V
CEsat
0.4 V
ILQ621
I
F
= 1.0 mA, I
CE
= 0.2 mA
ILD621GB
V
CEsat
0.4 V
ILQ621GB
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel/channel
CTR match
I
F
= 5.0 mA, V
CE
= 5.0 V
CTRX/
CTRY
1 to 1 3 to 1 %
Current transfer ratio
(collector emitter
saturated)
I
F
= 1.0 mA, V
CE
= 0.4 V
ILD621 CTR
CEsat
60 %
ILQ621 CTR
CEsat
60 %
ILD621GB CTR
CEsat
30 %
ILQ621GB CTR
CEsat
30 %
Current transfer ratio
(collector emitter)
I
F
= 5.0 mA, V
CE
= 5.0 V
ILD621 CTR
CE
50 80 600 %
ILQ621 CTR
CE
50 80 600 %
ILD621GB CTR
CE
100 200 600 %
ILQ621GB CTR
CE
100 200 600 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
On time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
on
3.0 µs
Rise time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
r
2.0 µs
Off time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
off
2.3 µs
Fall time I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
f
2.0 µs
Propagation H to L I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
PHL
1.1 µs
Propagation L to H I
F
= ± 10 mA, V
CC
= 5.0 V, R
L
= 75 Ω, 50 % of V
PP
t
PLH
2.5 µs