Datasheet

www.vishay.com
4
Document Number 83652
Rev. 1.3, 19-Apr-04
VISHAY
ILD615/ ILQ615
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage I
F
= 10 mA V
F
1.0 1.15 1.3 V
Breakdown voltage I
R
= 10 µAV
BR
6.0 30 V
Reverse current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance, junction to
lead
R
THJL
750 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
6.8 pF
Collector-emitter leakage
current, -1, -2
V
CE
= 10 V I
CEO
2.0 50 nA
Collector-emitter leakage
current, -3, -4
V
CE
= 10 V I
CEO
5.0 100 nA
Collector-emitter breakdown
voltage
I
CE
= 0.5 mA BV
CEO
70 V
Emitter-collector breakdown
voltage
I
E
= 0.1 mA BV
ECO
7.0 V
Thermal resistance, junction to
lead
R
THJL
500 K/W
Package transfer characteristics
Channel/Channel CTR match I
F
= 10 mA, V
CE
= 5.0 V CTRX/
CTRY
1 to 1 2 to 1
Parameter Test condition Symbol Min Typ. Max Unit
Capacitance (input-output) V
IO
= 0 V, f = 1.0 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V, T
A
= 25 °C R
S
10
12
10
14
Ω
Channel to channel isolation 500 VAC
Parameter Test condition Part Symbol Min Typ. Max Unit
Current Transfer Ratio
(collector-emitter saturated)
I
F
= 10 mA, V
CE
= 0.4 V ILD615-1
ILQ615-1
CTR
CEsat
25 %
ILD615-2
ILQ615-2
CTR
CEsat
40 %
ILD615-3
ILQ615-3
CTR
CEsat
60 %
ILD615-4
ILQ615-4
CTR
CEsat
100 %