Data Sheet

ManualsBrandsVISHAY ManualsFETsIRF610PBF, MOSFET

Document Number: 91023 www.vishay.com

S11-0510-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF610, SiHF610

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 8.8 mH, R

= 25 , I

= 3.3 A (see fig. 12).

c. I

 3.3 A, dI/dt  70 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 200

DS(on)

()V

= 10 V 1.5

(Max.) (nC) 8.2

(nC) 1.8

(nC) 4.5

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF610PbF

SiHF610-E3

SnPb

IRF610

SiHF610

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

3.3

= 100 °C 2.1

Pulsed Drain Current

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energy

64 mJ

Repetitive Avalanche Current

3.3 A

Repetitive Avalanche Energy

3.6 mJ

Maximum Power Dissipation T

= 25 °C P

36 W

Peak Diode Recovery dV/dt

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration Single D DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
PAGE 2
IRF610, SiHF610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF610, SiHF610 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 100 10-1 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 100 4.5 V 10-1 20 µs Pulse Width TC = 150 °C 10-1 91023_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91023 S11-0510-Rev. B, 21-Mar-11 6 7 8 9 10 Fig.
PAGE 4
IRF610, SiHF610 Vishay Siliconix 300 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ISD, Reverse Drain Current (A) Capacitance (pF) 250 101 200 Ciss 150 Coss 100 Crss 50 100 0 100 101 VDS = 40 V 8 10 5 100 µs 2 1 ms 1 5 10 ms 2 0.1 4 5 For test circuit see figure 13 0 91023_06 2 4 6 8 QG, Total Gate Charge (nC) TC = 25 °C TJ = 150 °C Single Pulse 2 10-2 10 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 2.
PAGE 5
IRF610, SiHF610 Vishay Siliconix RD VDS VGS 4.0 D.U.T. ID, Drain Current (A) RG 3.0 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit 1.0 VDS 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91023_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 0 − 0.5 1 0.2 0.1 0.1 PDM 0.05 0.02 0.
PAGE 6
IRF610, SiHF610 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS VDD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 140 ID 1.5 A 2.1 A Bottom 3.3 A Top 120 100 80 60 40 20 0 VDD = 50 V 25 91023_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF610, SiHF610 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.
PAGE 9
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