Datasheet

ManualsBrandsVISHAY ManualsFETsIRF620PBF, MOSFET N channel 5.2A 200V

Document Number: 91027 www.vishay.com

S11-0510-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF620, SiHF620

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 6.1 mH, R

= 25 , I

= 5.2 A (see fig. 12).

c. I

 5.2 A, dI/dt  95 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 200

DS(on)

()V

= 10 V 0.80

(Max.) (nC) 14

(nC) 3.0

(nC) 7.9

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF620PbF

SiHF620-E3

SnPb

IRF620

SiHF620

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

5.2

= 100 °C 3.3

Pulsed Drain Current

Linear Derating Factor 0.40 W/°C

Single Pulse Avalanche Energy

110 mJ

Repetitive Avalanche Current

5.2 A

Repetitive Avalanche Energy

5.0 mJ

Maximum Power Dissipation T

= 25 °C P

50 W

Peak Diode Recovery dV/dt

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC) Configuration Single DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
PAGE 2
IRF620, SiHF620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF620, SiHF620 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V 10-1 ID, Drain Current (A) ID, Drain Current (A) 101 Top 150 °C 100 25 °C 10-1 20 µs Pulse Width VDS = 50 V 20 µs Pulse Width TC = 25 °C 10-2 10-2 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91027_01 10-1 10-2 91027_02 4.5 V 20 µs Pulse Width TC = 150 °C 10-1 100 101 7 8 9 10 Fig.
PAGE 4
IRF620, SiHF620 Vishay Siliconix 750 Capacitance (pF) 600 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 450 Ciss 300 Coss 150 Crss 101 150 °C 25 °C 100 VGS = 0 V 0 100 101 0.
PAGE 5
IRF620, SiHF620 Vishay Siliconix RD VDS VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V 4.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91027_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 − 0.5 0.2 PDM 0.1 0.05 0.1 t1 0.02 0.
PAGE 6
IRF620, SiHF620 Vishay Siliconix EAS, Single Pulse Energy (mJ) 300 ID 2.3 A 3.3 A Bottom 5.2 A Top 250 200 150 100 50 0 VDD = 50 V 25 91027_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig.
PAGE 7
IRF620, SiHF620 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.
PAGE 9
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.