Datasheet

ManualsBrandsVISHAY ManualsFETsIRF624SPBF, MOSFET

Document Number: 91030

www.vishay.com

S11-1047-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF624S, SiHF624S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D

PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 8.3 mH, R

= 25 , I

= 4.4 A (see fig. 12).

c. I

 4.4 A, dI/dt  90 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

(V) 250

DS(on)

()V

= 10 V 1.1

(Max.) (nC) 14

(nC) 2.7

(nC) 7.8

Configuration Single

N-Channel MOSFET

PAK (TO-263)

ORDERING INFORMATION

Package D

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF624S-GE3

Lead (Pb)-free

IRF624SPbF

SiHF624S-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

250

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

4.4

= 100 °C 2.8

Pulsed Drain Current

Linear Derating Factor 0.40

W/°C

Linear Derating Factor (PCB Mount)

0.025

Single Pulse Avalanche Energy

100 mJ

Repetitive Avalanche Current

4.4 A

Repetitive Avalanche Energy

5.0 mJ

Maximum Power Dissipation T

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C 3.1

Peak Diode Recovery dV/dt

dV/dt 4.8 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.
PAGE 2
IRF624S, SiHF624S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 40 Maximum Junction-to-Ambient RthJA - - 62 Maximum Junction-to-Case (Drain) RthJC - - 2.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF624S, SiHF624S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 Top 4.5 V 10-1 ID, Drain Current (A) ID, Drain Current (A) 101 150 °C 100 25 °C 10-1 20 µs Pulse Width TC = 25 °C 100 10-1 101 4 VDS, Drain-to-Source Voltage (V) 91030_01 20 µs Pulse Width VDS = 50 V 4.5 V 10-1 20 µs Pulse Width TC = 150 °C 100 10-1 91030_02 101 VDS, Drain-to-Source Voltage (V) Fig.
PAGE 4
IRF624S, SiHF624S Vishay Siliconix 600 Capacitance (pF) 500 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 400 Ciss 300 200 Coss 100 Crss 101 150 °C 25 °C 0 100 101 0.4 VDS, Drain-to-Source Voltage (V) 91030_05 20 0.6 102 ID, Drain Current (A) VDS = 50 V 12 8 4 For test circuit see figure 13 0 0 91030_06 2 4 6 8 10 12 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.
PAGE 5
IRF624S, SiHF624S Vishay Siliconix RD VDS 5.0 VGS D.U.T. ID, Drain Current (A) Rg + - VDD 4.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 2.0 Fig. 10a - Switching Time Test Circuit 1.0 VDS 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91030_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.
PAGE 6
IRF624S, SiHF624S Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. Rg + - IAS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 240 ID 2.0 A 2.8 A Bottom 4.4 A Top 200 160 120 80 40 0 VDD = 50 V 25 91030_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF624S, SiHF624S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
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