Datasheet

ManualsBrandsVISHAY ManualsFETsIRF710PBF, MOSFET N channel 2A 400V

Document Number: 91041 For technical questions, contact: hvmos.techsupport@vishay.com

www.vishay.com

S09-0070-Rev. A, 02-Feb-09 1

Power MOSFET

IRF710, SiHF710

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 52 mH, R

= 25 Ω, I

= 2.0 A (see fig. 12).

c. I

≤ 2.0 A, dI/dt ≤ 40 A/µs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 400

DS(on)

(Ω)V

= 10 V 3.6

(Max.) (nC) 17

(nC) 3.4

(nC) 8.5

Configuration Single

N-

l M

FET

TO-220

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

IRF710PbF

SiHF710-E3

SnPb

IRF710

SiHF710

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

400

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

2.0

= 100 °C 1.2

Pulsed Drain Current

6.0

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energy

120 mJ

Repetitive Avalanche Current

2.0 A

Repetitive Avalanche Energy

3.6 mJ

Maximum Power Dissipation T

= 25 °C P

36 W

Peak Diode Recovery dV/dt

dV/dt 4.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 400 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 3.6 Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.
PAGE 2
IRF710, SiHF710 Vishay Siliconix THERMAL RESISTANCE PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. VDS TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.
PAGE 3
IRF710, SiHF710 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS 100 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 150 °C 100 25 °C 10-1 20 µs Pulse Width TC = 25 °C 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91041_01 20 µs Pulse Width VDS = 50 V ID, Drain Current (A) 100 4.5 V 20 µs Pulse Width TC = 150 °C 10-1 100 91041_02 RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 10 V 8.
PAGE 4
IRF710, SiHF710 400 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 300 Ciss 200 Coss 100 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 100 150 °C 25 °C 0 100 101 0.4 VDS, Drain-to-Source Voltage (V) 91041_05 VGS, Gate-to-Source Voltage (V) 0.6 102 ID, Drain Current (A) VDS = 80 V 12 8 4 For test circuit see figure 13 0 0 91041_06 2 4 6 8 10 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.
PAGE 5
IRF710, SiHF710 Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 2.0 ID, Drain Current (A) 10 V 1.6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1.2 Fig. 10a - Switching Time Test Circuit 0.8 VDS 90 % 0.4 0.0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (°C) 91041_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 0 − 0.5 1 0.2 0.1 0.05 0.02 0.01 0.
PAGE 6
IRF710, SiHF710 Vishay Siliconix EAS, Single Pulse Energy (mJ) 300 ID 0.89 A 1.3 A Bottom 2.0 A Top 250 200 150 100 50 0 VDD = 50 V 25 91041_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig.
PAGE 7
IRF710, SiHF710 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.