Datasheet

ManualsBrandsVISHAY ManualsFETsIRF740LCPBF, MOSFET

Document Number: 91053 www.vishay.com

S11-0507-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF740LC, SiHF740LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

Rating

• Reduced C

iss

, C

oss

, C

rss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing the new LCDMOS technology, the device

improvements are achieved without added product cost,

allowing for reduced gate drive requirements and total

system savings. In addition, reduced switching losses and

improved efficiency are achievable in a variety of high

frequency applications. Frequencies of a few MHz at high

current are possible using the new Low Charge MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that are characteristic of Power

MOSFETs ofter the designer a new standard in power

transistors for switching applications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 9.1 mH, R

= 25 Ω, I

= 10 A (see fig. 12).

c. I

≤ 10 A, dI/dt ≤ 120 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 400

DS(on)

(Ω)V

= 10 V 0.55

(Max.) (nC) 39

(nC) 10

(nC) 19

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF740LCPbF

SiHF740LC-E3

SnPb

IRF740LC

SiHF740LC

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

400

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 6.3

Pulsed Drain Current

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

520 mJ

Repetitive Avalanche Current

10 A

Repetitive Avalanche Energy

13 mJ

Maximum Power Dissipation T

= 25 °C P

125 W

Peak Diode Recovery dV/dt

dV/dt 4.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings.
PAGE 2
IRF740LC, SiHF740LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.76 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.
PAGE 3
IRF740LC, SiHF740LC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 101 150 °C 4.5 V 10-1 ID, Drain Current (A) ID, Drain Current (A) 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 20 µs Pulse Width TC = 25 °C 10-2 10-2 10-1 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 10-1 91053_02 20 µs Pulse Width TC = 150 °C 10-1 100 Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91053 S11-0507-Rev.
PAGE 4
IRF740LC, SiHF740LC Vishay Siliconix 2000 Ciss ISD, Reverse Drain Current (A) Capacitance (pF) 1600 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1200 Coss 800 400 Crss 0 100 0.8 VDS = 80 V 8 4 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms 5 For test circuit see figure 13 91053_06 6 12 18 24 30 36 QG, Total Gate Charge (nC) TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 1 42 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.
PAGE 5
IRF740LC, SiHF740LC Vishay Siliconix RD VDS VGS 10 8 ID, Drain Current (A) D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 VDS 2 90 % 0 25 50 75 100 125 150 TC, Case Temperature (°C) 91053_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 − 0.5 PDM 0.2 0.1 0.1 0.05 t1 t2 0.02 0.01 Notes: 1. Duty Factor, D = t1/t2 2.
PAGE 6
IRF740LC, SiHF740LC Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS A 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID 4.5 A 6.3 A Bottom 10 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91053_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF740LC, SiHF740LC Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220-1 MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.14 4.70 0.163 0.185 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.73 0.045 0.068 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 0.43 1.40 0.017 0.055 H(1) 6.10 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.
PAGE 9
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.