Datasheet

ManualsBrandsVISHAY ManualsFETsIRF820APBF, MOSFET

Document Number: 91057 www.vishay.com

S11-0507-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF820A, SiHF820A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half bridge

• Full bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 45 mH, R

= 25 Ω, I

= 2.5 A (see fig. 12).

c. I

≤ 2.5 A, dI/dt ≤ 270 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

(Ω)V

= 10 V 3.0

(Max.) (nC) 17

(nC) 4.3

(nC) 8.5

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF820APbF

SiHF820A-E3

SnPb

IRF820A

SiHF820A

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

2.5

= 100 °C 1.6

Pulsed Drain Current

Linear Derating Factor 0.40 W/°C

Single Pulse Avalanche Energy

140 mJ

Repetitive Avalanche Current

2.5 A

Repetitive Avalanche Energy

5.0 mJ

Maximum Power Dissipation T

= 25 °C P

50 W

Peak Diode Recovery dV/dt

dV/dt 3.4 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC) 4.3 Qgd (nC) 8.
PAGE 2
IRF820A, SiHF820A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.
PAGE 3
IRF820A, SiHF820A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 ID, Drain-to-Source Current (A) 4.5 V 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 VDS, Drain-to-Source Voltage (V) 91057_01 TJ = 150 °C 1 TJ = 25 °C 0.1 4.0 1 4.5 V 20 µs Pulse Width TJ = 150 °C 0.1 1 91057_02 10 Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91057 S11-0507-Rev. B, 21-Mar-11 3.0 2.5 7.0 8.0 9.0 ID = 2.5 A VGS = 10 V 2.0 1.5 1.0 0.5 0.
PAGE 4
IRF820A, SiHF820A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 103 Ciss 102 Coss 10 Crss 10 ISD, Reverse Drain Current (A) C, Capacitance (pF) 104 TJ = 150 °C 1 TJ = 25 °C 1 102 10 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 91057_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 102 ID = 2.
PAGE 5
IRF820A, SiHF820A Vishay Siliconix RD VDS VGS D.U.T. RG 3.0 + - VDD 2.5 ID, Drain Current (A) 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 1.5 Fig. 10a - Switching Time Test Circuit 1.0 VDS 0.5 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91054_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.50 0.20 PDM 0.10 0.05 0.1 0.02 0.
PAGE 6
IRF820A, SiHF820A Vishay Siliconix L Vary tp to obtain required IAS VDS D.U.T RG + - IAS QG 10 V V DD A QGS QGD 10 V 0.01 Ω tp VG Fig. 12a - Unclamped Inductive Test Circuit Charge VDS Fig. 12d - Basic Gate Charge Waveform tp VDD VDS IAS EAS, Single Pulse Avalanche Energy (mJ) Fig. 12b - Unclamped Inductive Waveforms 300 ID 1.1 A 1.6 A Bottom 2.5 A Top 250 200 VDSav, Avalanche Voltage (V) 700 650 600 550 0.0 150 0.5 1.0 1.5 2.0 2.
PAGE 7
IRF820A, SiHF820A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220-1 MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.14 4.70 0.163 0.185 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.73 0.045 0.068 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 0.43 1.40 0.017 0.055 H(1) 6.10 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.
PAGE 9
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