Datasheet

Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 11
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 7.0 A
I
DM
Pulsed Drain Current  44
P
D
@T
C
= 25°C Power Dissipation 170 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  6.9 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
3/30/99
PD- 91809B
T
O
-22
0
AB
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
Rds(on) max I
D
500V 0.52Ω 11A
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
IRFB11N50A
www.irf.com 1
GS
D
Notes  through  are on page 8
l Power Factor Correction Boost
Absolute Maximum Ratings