Datasheet

ManualsBrandsVISHAY ManualsFETsIRFR014, MOSFET N channel 7/7A 60V

Document Number: 91263 www.vishay.com

S-81432-Rev. A, 07-Jul-08 1

Power MOSFET

IRFR014, IRFU014, SiHFR014, SiHFU014

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Surface Mount (IRFR014/SiHFR014)

• Straight Lead (IRFU014/SiHFU014)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

PRODUCT SUMMARY

(V) 60

DS(on)

(Ω)V

= 10 V 0.20

(Max.) (nC) 11

(nC) 3.1

(nC) 5.8

Configuration Single

N-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free

IRFR014PbF IRFR014TRLPbF

IRFR014TRPbF

IRFU014PbF

SiHFR014-E3 SiHFR014TL-E3

SiHFR014T-E3

SiHFU014-E3

SnPb

IRFR014 IRFR014TRL

IRFR014TR

IRFU014

SiHFR014 SiHFR014TL

SiHFR014T

SiHFU014

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

7.7

= 100 °C 4.9

Pulsed Drain Current

Linear Derating Factor 0.20

W/°C

Linear Derating Factor (PCB Mount)

0.020

Single Pulse Avalanche Energy

47 mJ

Maximum Power Dissipation T

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C 2.5

Peak Diode Recovery dV/dt

dV/dt 4.5 V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 11 • Straight Lead (IRFU014/SiHFU014) Qgs (nC) 3.1 • Available in Tape and Reel Qgd (nC) 5.8 Configuration Available • Surface Mount (IRFR014/SiHFR014) 0.
PAGE 2
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL LIMIT UNIT TJ, Tstg - 55 to + 150 °C 260d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12). c.
PAGE 3
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - 7.
PAGE 4
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91263 S-81432-Rev.
PAGE 5
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix VDS VGS RD D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91263 S-81432-Rev. A, 07-Jul-08 www.vishay.
PAGE 6
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.
PAGE 7
IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - + RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D= - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.