Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET N, 200 V 2.6 A 25 W DPAK

Document Number: 91268 www.vishay.com

S-82987-Rev. B, 19-Jan-09 1

Power MOSFET

IRFR210, IRFU210, SiHFR210, SiHFU210

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR210/SiHFR210)

• Straight Lead (IRFU210/SiHFU210)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 28 mH, R

= 25 Ω, I

= 2.6 A (see fig. 12).

c. I

≤ 2.6 A, dI/dt ≤ 70 A/µs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

(V) 200

DS(on)

(Ω)V

= 10 V 1.5

(Max.) (nC) 8.2

(nC) 1.8

(nC) 4.5

Configuration Single

N-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free

IRFR210PbF IRFR210TRLPbF

IRFR210TRPbF

- IRFU210PbF

SiHFR210-E3 SiHFR210TL-E3

SiHFR210T-E3

- SiHFU210-E3

SnPb

IRFR210 IRFR210TRL

IRFR210TR

IRFR210TRR

IRFU210

SiHFR210 SiHFR210TL

SiHFR210T

SiHFR210TR

SiHFU210

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

2.6

= 100 °C 1.7

Pulsed Drain Current

Linear Derating Factor 0.20

W/°C

Linear Derating Factor (PCB Mount)

0.020

Single Pulse Avalanche Energy

130 mJ

Avalanche Current

2.7 A

Repetitive Avalanche Energy

2.5 mJ

Maximum Power Dissipation T

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C 2.5

Peak Diode Recovery dV/dt

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 260

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 • Straight Lead (IRFU210/SiHFU210) 4.
PAGE 2
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 5.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91268 S-82987-Rev. B, 19-Jan-09 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.
PAGE 4
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91268 S-82987-Rev.
PAGE 5
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix VDS VGS RD D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91268 S-82987-Rev. B, 19-Jan-09 www.vishay.
PAGE 6
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.
PAGE 7
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
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