Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET N, 60 V 50 A 150 W TO-220

Document Number: 91292 www.vishay.com

S11-0517-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFZ44R, SiHFZ44R

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for

Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced

processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 44 μH, R

= 25 Ω, I

= 51 A (see fig. 12).

c. I

≤ 51 A, dV/dt ≤ 250 A/μs, V

≤ V

, T

≤ 175 °C.

d. 1.6 mm from case.

e. Current limited by the package, (die current = 51 A).

PRODUCT SUMMARY

(V) 60

DS(on)

(Ω)V

= 10 V 0.028

(Max.) (nC) 67

(nC) 18

(nC) 25

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRFZ44RPbF

SiHFZ44R-E3

SnPb

IRFZ44R

SiHFZ44R

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

± 20

Continuous Drain Current

at 10 V

= 25 °C

Continuous Drain Current

= 100 °C 36

Pulsed Drain Current

200

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

100 mJ

Maximum Power Dissipation T

= 25 °C P

150 W

Peak Diode Recovery dV/dt

dV/dt 4.5 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.
PAGE 2
IRFZ44R, SiHFZ44R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFZ44R, SiHFZ44R Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 3 - Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics 2.5 ID = 51A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig. 2 - Typical Output Characteristics Document Number: 91292 S11-0517-Rev. B, 21-Mar-11 Fig. 4 - Normalized On-Resistance vs. Temperature www.
PAGE 4
IRFZ44R, SiHFZ44R Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100us 1ms 10 1 10ms TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 8 - Maximum Safe Operating Area Document Number: 91292 S11-0517-Rev.
PAGE 5
IRFZ44R, SiHFZ44R Vishay Siliconix 60 LIMITED BY PACKAGE VGS 50 ID , Drain Current (A) RD VDS D.U.T. RG 40 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 30 Fig. 10a - Switching Time Test Circuit 20 VDS 90 % 10 0 25 50 75 100 125 150 175 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 0.1 PDM 0.10 t1 0.05 t2 0.02 0.01 0.
PAGE 6
IRFZ44R, SiHFZ44R Vishay Siliconix VDS 15 V tp Driver L VDS D.U.T RG + A - VDD IAS 20 V tp IAS 0.01 Ω EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.
PAGE 7
IRFZ44R, SiHFZ44R Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.
PAGE 9
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